IXTT110N10L2
MOSFET N-CH 100V 110A TO268Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTT110N10L2 is a high-performance N-Channel Power MOSFET from the Linear L2™ series. This component features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) rating of 110A at 25°C (Tc), with a maximum power dissipation of 600W (Tc). The device offers a low on-resistance (Rds On) of 18mOhm at 55A and 10V, facilitated by its 10V gate drive requirement. Key characteristics include a gate charge (Qg) of 260 nC (max) at 10V and input capacitance (Ciss) of 10500 pF (max) at 25V. Designed for surface mounting, it utilizes the TO-268AA package. This MOSFET is suitable for applications in industrial power supplies, motor control, and power factor correction.
Additional Information
Series: Linear L2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-268AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10500 pF @ 25 V |
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