IXTR90P10P
MOSFET P-CH 100V 57A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS PolarP™ P-Channel Power MOSFET, part number IXTR90P10P, offers a 100V drain-source breakdown voltage. This through-hole device features a continuous drain current rating of 57A at 25°C (Tc) and a maximum power dissipation of 190W (Tc). The Rds On is specified at a maximum of 27mOhm when driven at 45A and 10V. Key parameters include a gate charge (Qg) of 120 nC at 10V and input capacitance (Ciss) of 5800 pF at 25V. The MOSFET operates within a temperature range of -55°C to 150°C (TJ) and is housed in an ISOPLUS247™ package. This component is suitable for applications in power conversion, motor control, and industrial systems.
Additional Information
Series: PolarP™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 25 V |
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