IXTR68P20T
MOSFET P-CH 200V 44A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTR68P20T is a P-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 44A at 25°C (Tc). With a maximum power dissipation of 270W (Tc), it is well-suited for demanding power management tasks. The Rds On (Max) is 64mOhm at 34A and 10V, ensuring efficient power transfer. Key parameters include a Gate Charge (Qg) of 380 nC at 10V and Input Capacitance (Ciss) of 33400 pF at 25V. The device operates within an extended temperature range of -55°C to 150°C (TJ). Packaged in an ISOPLUS247™ (TO-247-3) form factor for through-hole mounting, this MOSFET is utilized across various industrial sectors including power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 33400 pF @ 25 V |
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