IXTR30N25
MOSFET N-CH 250V 25A ISOPLUS247Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTR30N25 is a high-efficiency N-Channel MOSFET designed for demanding applications. This device features a drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 25A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The low on-resistance (Rds On) of 75mOhm at 15A and 10V gate drive voltage ensures minimized conduction losses. Key parameters include input capacitance (Ciss) of 3950pF at 25V and gate charge (Qg) of 136nC at 10V, facilitating efficient switching. Operating across a temperature range of -55°C to 150°C (TJ), this component is housed in the ISOPLUS247™ package with a through-hole mounting type. It finds application in power supply designs, motor control, and industrial power conversion.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ISOPLUS247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 136 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3950 pF @ 25 V |
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