IXTQ90N15T
MOSFET N-CH 150V 90A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTQ90N15T is a high-performance N-channel Trench MOSFET designed for demanding applications. This component offers a continuous drain current of 90A at 25°C (Tc) and a drain-source voltage (Vdss) of 150V. With a maximum on-resistance (Rds On) of 20mOhm at 45A and 10V gate-source voltage, it ensures efficient power transfer. Key parameters include a Ciss of 4100 pF at 25V, a Qg of 80 nC at 10V, and a gate-source voltage (Vgs) tolerance of ±30V. The IXTQ90N15T features a maximum power dissipation of 455W (Tc) and operates within a temperature range of -55°C to 175°C. Packaged in a TO-3P through-hole configuration, this MOSFET is suitable for power switching applications across various industrial sectors.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 455W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 25 V |
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