IXTQ80N28T
MOSFET N-CH 280V 80A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTQ80N28T is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a maximum drain-source voltage (Vdss) of 280V and a continuous drain current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 500W (Tc). The on-resistance (Rds On) is specified at 49mOhm maximum at 500mA and 10V gate-source voltage. Key specifications include a gate charge (Qg) of 115 nC at 10V and input capacitance (Ciss) of 5000 pF at 25V. The IXTQ80N28T utilizes MOSFET technology and is housed in a through-hole TO-3P-3, SC-65-3 package. It operates within a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±30V. This device is commonly found in industrial power supplies, motor control, and high-power switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 280 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 25 V |
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