IXTQ60N20L2
MOSFET N-CH 200V 60A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTQ60N20L2 is an N-Channel Power MOSFET from the Linear L2™ series. This component features a 200V drain-source voltage (Vdss) and a continuous drain current (Id) of 60A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 45mOhm at 30A and 10V. With a maximum power dissipation of 540W (Tc), the IXTQ60N20L2 is suitable for high power applications. Key parameters include input capacitance (Ciss) of 10500 pF at 25V and gate charge (Qg) of 255 nC at 10V. The device utilizes MOSFET technology and is packaged in a TO-3P-3, SC-65-3 (TO-3P) through-hole configuration. It operates across a temperature range of -55°C to 150°C (TJ) and has a gate-source voltage (Vgs) limit of ±20V. This component finds application in power switching and control circuits across various industrial sectors.
Additional Information
Series: Linear L2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 255 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10500 pF @ 25 V |
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