IXTQ470P2
MOSFET N-CH 500V 42A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTQ470P2, an N-Channel Power MOSFET from the PolarP2™ series, offers a robust 500V drain-source voltage and a continuous drain current of 42A at 25°C (Tc). This device features a low on-resistance of 145mOhm maximum at 500mA and 10V, with a gate charge of 88 nC maximum at 10V. The input capacitance (Ciss) is 5400 pF maximum at 25V. Its high power dissipation capability of 830W (Tc) and a maximum junction temperature of 150°C make it suitable for demanding applications. The IXTQ470P2 is housed in a TO-3P package for through-hole mounting. Industries utilizing this component include industrial power supplies, motor control, and high-voltage switching.
Additional Information
Series: PolarP2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |
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