IXTQ32N65X
MOSFET N-CH 650V 32A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTQ32N65X is a 650V N-Channel MOSFET from the Ultra X series, packaged in a TO-3P. This high-performance device offers a continuous drain current capability of 32A (Tc) and a maximum power dissipation of 500W (Tc). Key electrical characteristics include a low on-resistance of 135mOhm at 16A and 10V gate drive, with a gate charge (Qg) of 54 nC at 10V. Input capacitance (Ciss) is rated at 2205 pF at 25V. Designed for demanding applications, it operates over a wide temperature range of -55°C to 150°C (TJ) and features a ±30V maximum gate-source voltage. This component is suitable for use in power conversion, industrial motor control, and high-voltage power supplies.
Additional Information
Series: Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2205 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTH20N65X
MOSFET N-CH 650V 20A TO247
IXTP32N65X
MOSFET N-CH 650V 32A TO220-3
IXTP32N65XM
MOSFET N-CH 650V 14A TO220-3
