IXTQ26N60P
MOSFET N-CH 600V 26A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTQ26N60P is an N-Channel Power MOSFET from the Polar series, designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 26A at 25°C (Tc). With a maximum power dissipation of 460W (Tc), it is suitable for demanding power switching tasks. The Rds On (Max) is specified at 270mOhm at 500mA and 10V Vgs. Key parameters include Input Capacitance (Ciss) of 4150pF (Max) at 25V and Gate Charge (Qg) of 72nC (Max) at 10V Vgs, with a threshold voltage (Vgs(th)) of 5V (Max) at 250µA. The IXTQ26N60P utilizes Metal Oxide technology and is housed in a TO-3P-3, SC-65-3 package for through-hole mounting. This device finds application in power supplies, industrial motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 460W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 25 V |
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