IXTQ250N075T
MOSFET N-CH 75V 250A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTQ250N075T is an N-Channel TrenchMV™ MOSFET designed for high-power applications. This component features a Drain to Source Voltage (Vdss) of 75V and a continuous drain current (Id) of 250A at 25°C (Tc), with a maximum power dissipation of 550W (Tc). The low on-resistance (Rds On) of 4mOhm at 50A and 10V gate-source voltage ensures efficient power transfer. Key parameters include a gate charge (Qg) of 200 nC @ 10V and input capacitance (Ciss) of 9900 pF @ 25V. The device operates with a drive voltage up to 10V and has a maximum gate-source voltage (Vgs) rating of ±20V. The threshold voltage (Vgs(th)) is 4V at 250µA. Packaged in a TO-3P-3, SC-65-3 (TO-3P) with a through-hole mounting type, it is suitable for operation across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is utilized in demanding applications such as industrial power supplies, electric vehicle powertrains, and high-current switching circuits.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 250A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 550W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9900 pF @ 25 V |
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