IXTQ240N055T
MOSFET N-CH 55V 240A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTQ240N055T is a high-performance N-Channel Power MOSFET from the TrenchMV™ series, designed for demanding applications. This component features a low on-resistance of 3.6mOhm at 25A and 10V Vgs, coupled with a continuous drain current rating of 240A at 25°C (Tc) and a drain-source voltage of 55V. The maximum power dissipation is 480W at 25°C (Tc). With a gate charge of 170 nC at 10V and input capacitance of 7600 pF at 25V, it offers efficient switching characteristics. The device operates across a wide temperature range of -55°C to 175°C (TJ) and is housed in a robust TO-3P package for through-hole mounting. This MOSFET is suitable for use in power conversion, industrial motor control, and electric vehicle charging systems.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7600 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTA152N085T7
MOSFET N-CH 85V 152A TO263-7
IXTA180N085T
MOSFET N-CH 85V 180A TO263
IXTA180N085T7
MOSFET N-CH 85V 180A TO263-7