IXTQ220N075T
MOSFET N-CH 75V 220A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTQ220N075T is an N-Channel power MOSFET from the TrenchMV™ series, featuring a 75V breakdown voltage and a continuous drain current capability of 220A at 25°C (Tc). This component offers a low on-resistance of 4.5mOhm at 25A and 10V Vgs, facilitated by its advanced trench technology. The device is housed in a TO-3P package, suitable for through-hole mounting, and supports a maximum power dissipation of 480W (Tc). Key parameters include a gate charge (Qg) of 165nC at 10V and input capacitance (Ciss) of 7700pF at 25V. The operating temperature range is -55°C to 175°C (TJ). This high-current, low-RDS(on) MOSFET is utilized in applications such as industrial motor control, power supplies, and automotive systems.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 220A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7700 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTA152N085T7
MOSFET N-CH 85V 152A TO263-7
IXTA180N085T
MOSFET N-CH 85V 180A TO263
IXTA180N085T7
MOSFET N-CH 85V 180A TO263-7