IXTQ220N055T
MOSFET N-CH 55V 220A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTQ220N055T is an N-Channel Power MOSFET from the TrenchMV™ series, featuring a 55V drain-to-source voltage and a continuous drain current of 220A at 25°C (Tc). This through-hole component, packaged in a TO-3P-3 (SC-65-3), offers a low on-resistance of 4mOhm at 25A and 10V Vgs. With a maximum power dissipation of 430W (Tc) and a gate charge of 158 nC at 10V, it is suitable for high-current applications. The MOSFET technology supports a Vgs(th) of 4V at 250µA and a maximum Vgs of ±20V. This device finds utility in power conversion and distribution systems across various industrial and automotive sectors.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 220A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 430W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 158 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7200 pF @ 25 V |
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