IXTQ200N075T
MOSFET N-CH 75V 200A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTQ200N075T is an N-Channel Power MOSFET designed for high-current applications. This through-hole component features a drain-to-source voltage (Vdss) of 75V and a continuous drain current (Id) capacity of 200A at 25°C (Tc). With a maximum on-resistance (Rds On) of 5mOhm at 25A and 10V gate-source voltage, it offers efficient power handling with a maximum power dissipation of 430W (Tc). Key parameters include a gate charge (Qg) of 160nC at 10V and input capacitance (Ciss) of 6800pF at 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-3P package. This MOSFET is utilized in industries such as industrial power supplies, motor control, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 430W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFK90N20Q
MOSFET N-CH 200V 90A TO264AA
IXFH15N80
MOSFET N-CH 800V 15A TO247AD
IXFH20N60
MOSFET N-CH 600V 20A TO-247AD
