IXTQ200N06P
MOSFET N-CH 60V 200A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTQ200N06P is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) capability of 200A at 25°C (Tc), with a maximum power dissipation of 714W (Tc). The low on-resistance (Rds On) of 5mOhm is achieved at 400A and 15V gate drive, ensuring efficient power transfer. Key parameters include a gate charge (Qg) of 200 nC at 10V and input capacitance (Ciss) of 5400 pF at 25V. Operating across a wide temperature range from -55°C to 175°C (TJ), this MOSFET is housed in a TO-3P package, facilitating through-hole mounting. The IXTQ200N06P is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 400A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 714W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |
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