IXTQ180N085T
MOSFET N-CH 85V 180A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS N-Channel TrenchMV™ MOSFET, part number IXTQ180N085T, offers an 85V drain-source voltage and 180A continuous drain current at 25°C case temperature. This device features a low on-resistance of 5.5mOhm maximum at 25A and 10V gate-source voltage. With a maximum power dissipation of 430W, it utilizes a TO-3P through-hole package for robust thermal management. Key parameters include a gate charge of 170nC at 10V and input capacitance of 7500pF at 25V. This component is suitable for applications in industrial power supplies, electric vehicle powertrains, and high-power switching systems. The operating temperature range is -55°C to 175°C.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 430W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTA152N085T7
MOSFET N-CH 85V 152A TO263-7
IXTA180N085T
MOSFET N-CH 85V 180A TO263
IXTA180N085T7
MOSFET N-CH 85V 180A TO263-7