IXTQ180N055T
MOSFET N-CH 55V 180A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS N-Channel Power MOSFET, part number IXTQ180N055T, offers a 55V drain-source voltage and a continuous drain current of 180A at 25°C (Tc). This through-hole component features a low on-resistance of 4mOhm at 50A and 10V gate-source voltage, with a gate charge of 160nC at 10V. The input capacitance (Ciss) is specified at 5800pF maximum at 25V. Packaged in a TO-3P-3, SC-65-3 configuration, this device is suitable for high-power applications across industries such as industrial automation, power supply design, and electric vehicle power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-3P |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 25 V |
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