IXTQ160N085T
MOSFET N-CH 85V 160A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTQ160N085T is an N-Channel Power MOSFET designed for high-current applications. This component features a drain-source voltage (Vdss) of 85V and a continuous drain current (Id) of 160A at 25°C (Tc). The low on-resistance (Rds On) of 6mOhm at 50A and 10V drive voltage enables efficient power handling. With a maximum power dissipation of 360W (Tc), it is suitable for demanding thermal environments. The device utilizes a through-hole TO-3P package, facilitating robust mounting. Key parameters include a gate charge (Qg) of 164 nC at 10V and input capacitance (Ciss) of 6400 pF at 25V. This MOSFET is commonly employed in power switching, motor control, and power supply applications across industrial and automotive sectors. The operating temperature range is -55°C to 175°C (TJ), with a maximum gate-source voltage of ±20V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 164 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6400 pF @ 25 V |
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