IXTQ160N075T
MOSFET N-CH 75V 160A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTQ160N075T is a TrenchMV™ series N-Channel Power MOSFET designed for high-current applications. This component features a Drain-Source Voltage (Vdss) of 75V and a continuous Drain Current (Id) of 160A at 25°C (Tc), with a maximum power dissipation of 360W (Tc). The low on-resistance of 6mOhm at 25A and 10V gate drive voltage, coupled with a maximum gate charge (Qg) of 112 nC @ 10V, ensures efficient switching performance. With a maximum input capacitance (Ciss) of 4950 pF @ 25V, this device is suitable for power conversion, motor control, and high-power switching applications. The device is housed in a standard TO-3P package, facilitating through-hole mounting. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 112 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4950 pF @ 25 V |
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