IXTQ152N085T
MOSFET N-CH 85V 152A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTQ152N085T is an N-Channel Power MOSFET from the TrenchMV™ series. This component features a Drain-to-Source Voltage (Vdss) of 85 V and a continuous Current-Drain (Id) rating of 152 A at 25°C (Tc). The low on-resistance is specified as a maximum of 7 mOhm at 25 A and 10 V gate-source voltage. With a maximum power dissipation of 360 W (Tc), this device is suitable for high-power applications. It offers a gate charge (Qg) of 114 nC at 10 V and an input capacitance (Ciss) of 5500 pF at 25 V. The IXTQ152N085T is packaged in a TO-3P through-hole package, designed for robust thermal management. Operating temperature range is from -55°C to 175°C (TJ). This component finds application in power switching, motor control, and power supply designs across various industrial sectors.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 152A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 25 V |
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