IXTQ150N06P
MOSFET N-CH 60V 150A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTQ150N06P is a high-performance N-Channel power MOSFET from the Polar series, designed for demanding applications. This component features a 60V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 150A at 25°C (Tc), with a maximum power dissipation of 480W (Tc). The extremely low On-Resistance (Rds On) of 10mOhm is achieved at 75A and 10V gate drive. Key characteristics include a gate charge (Qg) of 118 nC at 10V and an input capacitance (Ciss) of 3000 pF at 25V. The IXTQ150N06P utilizes TO-3P through-hole packaging and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in industrial, automotive, and power supply applications requiring robust switching performance.
Additional Information
Series: PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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