IXTQ14N60P
MOSFET N-CH 600V 14A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTQ14N60P is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 14A at 25°C, with a maximum power dissipation of 300W (Tc). The IXTQ14N60P offers a low on-resistance (Rds On) of 550mOhm at 7A and 10V gate drive. Key parameters include a gate charge (Qg) of 36nC at 10V and input capacitance (Ciss) of 2500pF at 25V. It operates within a temperature range of -55°C to 150°C (TJ). The device is housed in a TO-3P package, suitable for through-hole mounting. This MOSFET is utilized in power supply designs, motor control, and lighting applications.
Additional Information
Series: PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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