IXTQ110N055P
MOSFET N-CH 55V 110A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS Polar series IXTQ110N055P is an N-Channel MOSFET designed for high-power switching applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) capability of 110A at 25°C, with a maximum power dissipation of 390W (Tc). The low on-resistance (Rds On) of 13.5mOhm at 10V Vgs and 500mA Id, coupled with a gate charge (Qg) of 76nC at 10V, ensures efficient switching performance. It offers a high junction operating temperature range of -55°C to 175°C. The device is housed in a TO-3P package, suitable for through-hole mounting. This MOSFET is utilized in industries such as industrial power supplies, automotive electronics, and motor control systems.
Additional Information
Series: PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 390W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTH22N50P
MOSFET N-CH 500V 22A TO247
IXTA50N20P
MOSFET N-CH 200V 50A TO263
IXTK140N30P
MOSFET N-CH 300V 140A TO264
