IXTQ102N20T
MOSFET N-CH 200V 102A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTQ102N20T is a high-performance N-Channel Power MOSFET designed for demanding applications. This Trench technology MOSFET offers a 200V drain-source voltage (Vdss) and a continuous drain current (Id) of 102A at 25°C (Tc). With a maximum power dissipation of 750W (Tc) and a low on-resistance of 23mOhm at 500mA and 10V (Id, Vgs), it ensures efficient power handling. Key parameters include a gate charge (Qg) of 114 nC at 10V and input capacitance (Ciss) of 6800 pF at 25V. The component features a TO-3P package for robust thermal management and is suitable for through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). This IXYS MOSFET is commonly utilized in power conversion, industrial motor control, and high-power switching applications.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 102A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-3P |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
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