IXTQ102N15T
MOSFET N-CH 150V 102A TO3PManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTQ102N15T is an N-Channel Power MOSFET designed for high-performance switching applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 102A at 25°C, with a maximum power dissipation of 455W (Tc). The low on-resistance of 18mOhm is achieved at 500mA and a gate-source voltage of 10V. Key parameters include a gate charge (Qg) of 87 nC at 10V and input capacitance (Ciss) of 5220 pF at 25V. The device is housed in a TO-3P package, suitable for demanding thermal environments. This MOSFET is commonly utilized in industrial power supplies, motor control, and high-power amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 102A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 455W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5220 pF @ 25 V |
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