IXTP90N055T
MOSFET N-CH 55V 90A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP90N055T is an N-Channel power MOSFET from the TrenchT2™ series, designed for demanding applications. This through-hole component features a 55V drain-to-source voltage (Vdss) and a continuous drain current capability of 90A at 25°C (Tc). With a maximum power dissipation of 176W (Tc) and a low on-resistance of 8.8mOhm at 25A and 10V, it offers efficient power switching. Key parameters include a gate charge (Qg) of 61 nC at 10V and input capacitance (Ciss) of 2500 pF at 25V. The TO-220-3 package facilitates robust thermal management. This device is suitable for use in power supply, motor control, and industrial automation applications. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchT2™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 176W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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