IXTP8N70X2M
MOSFET N-CH 700V 4A TO220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP8N70X2M is an N-Channel MOSFET from the Ultra X2 series, packaged in a TO-220 Isolated Tab. This component features a maximum drain-source voltage (Vdss) of 700V and a continuous drain current (Id) of 4A at 25°C, with a maximum power dissipation of 32W. The device offers a low on-resistance (Rds On) of 550mOhm at 500mA and 10V gate-source voltage, with a gate charge (Qg) of 12nC at 10V. Input capacitance (Ciss) is rated at 800pF. This MOSFET is suitable for high-voltage switching applications across industries such as power supplies, industrial automation, and renewable energy systems. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: Ultra X2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220 Isolated Tab |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 10 V |
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