IXTP8N70X2
MOSFET N-CH 700V 8A TO220-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP8N70X2 is an N-Channel Power MOSFET from the Ultra X2 series, housed in a TO-220-3 package. This component features a Drain-Source Voltage (Vdss) of 700V and a continuous drain current (Id) of 8A at 25°C. With a maximum power dissipation of 150W (Tc), it offers a low on-resistance of 500mOhm at 500mA and 10V. Key parameters include a gate charge (Qg) of 12 nC at 10V and input capacitance (Ciss) of 800 pF at 10V. The maximum gate-source voltage (Vgs) is ±30V. This device is suitable for applications in power supply, industrial motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: Ultra X2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 10 V |
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