IXTP8N50PM
MOSFET N-CH 500V 4A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP8N50PM is a high-performance N-channel Power MOSFET from the PolarHV™ series, designed for demanding applications. This component features a 500V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C (Tc), with a maximum power dissipation of 41W (Tc). The Rds On is specified at a maximum of 800mOhm at 4A and 10V Vgs. Key parameters include a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 1050 pF at 25V. The device operates across a temperature range of -55°C to 150°C (TJ) and is housed in a standard TO-220-3 package for through-hole mounting. This MOSFET is suitable for power supply, power factor correction, and motor drive applications.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 25 V |
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