IXTP7N60PM
MOSFET N-CH 600V 4A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTP7N60PM is a Polar™ series N-Channel Power MOSFET designed for demanding applications. This component features a 600V drain-source breakdown voltage and a continuous drain current of 4A at 25°C (Tc), with a maximum power dissipation of 41W (Tc). The device exhibits a maximum on-resistance (Rds On) of 1.1 Ohm at 3.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 20 nC (Max) at 10V and input capacitance (Ciss) of 1180 pF (Max) at 25V. Operating across a wide temperature range from -55°C to 150°C (TJ), this MOSFET is housed in a standard TO-220-3 package with through-hole mounting. Its robust design makes it suitable for use in power supply units, motor control, and industrial power applications.
Additional Information
Series: Polar™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 100µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 25 V |
Request a Quote
Clients Also Buy
IXGQ85N33PCD1
IGBT 330V 85A 150W TO3P
MMIX1T132N50P3
MOSFET N-CH 500V 63A POLAR3
IXTY2N60P
MOSFET N-CH 600V 2A TO252
