IXTP7N60P
MOSFET N-CH 600V 7A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP7N60P is an N-Channel Power MOSFET from the PolarHV™ series, packaged in a TO-220-3 through-hole configuration. This device offers a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). Key electrical characteristics include a maximum Rds(on) of 1.1 Ohm at 3.5A and 10V Vgs, and a gate charge (Qg) of 20 nC at 10V Vgs. Input capacitance (Ciss) is specified at 1080 pF maximum at 25V Vds. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supply design, industrial motor control, and high-voltage switching.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 100µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 25 V |
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