IXTP76N075T
MOSFET N-CH 75V 76A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTP76N075T is an N-Channel Power MOSFET from the TrenchMV™ series. This through-hole component features a 75V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 76A at 25°C (Tc). Its low on-resistance is specified as a maximum of 12mOhm at 25A and 10V Vgs. The device offers a maximum power dissipation of 176W (Tc) and a maximum gate-source voltage of ±20V. Key capacitive parameters include an input capacitance (Ciss) of 2580pF (Max) at 25V Vds and a gate charge (Qg) of 57nC (Max) at 10V Vgs. The IXTP76N075T is suitable for applications in industrial and automotive sectors where high current and efficient switching are critical. It is supplied in a TO-220-3 package.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 76A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 176W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2580 pF @ 25 V |
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