IXTP70N085T
MOSFET N-CH 85V 70A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP70N085T is an N-Channel TrenchMV™ MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 85V and a continuous Drain Current (Id) of 70A at 25°C (Tc). With a maximum Power Dissipation (Pd) of 176W (Tc), it offers robust thermal performance. The Rds On is specified at a maximum of 13.5mOhm at 25A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 59nC (Max) @ 10V and Input Capacitance (Ciss) of 2570pF (Max) @ 25V. Mounted via a through-hole configuration in a TO-220-3 package, this device operates within an extended temperature range of -55°C to 175°C (TJ). It finds application in industries such as industrial power supplies, motor control, and automotive electronics.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 176W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2570 pF @ 25 V |
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