IXTP64N055T
MOSFET N-CH 55V 64A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP64N055T is a TrenchMV™ series N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 55V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 64A at 25°C (Tc). With a low on-resistance (Rds On) of 13mOhm at 500mA and 10V gate-source voltage, it minimizes conduction losses. The device offers a maximum power dissipation of 130W (Tc) and a gate charge (Qg) of 37nC at 10V. Its input capacitance (Ciss) is 1420pF at 25V. Housed in a TO-220-3 package, the IXTP64N055T is suitable for through-hole mounting and operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is commonly employed in industrial power supplies, motor control, and electric vehicle charging systems.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 25µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1420 pF @ 25 V |
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