IXTP5N60P
MOSFET N-CH 600V 5A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP5N60P is a PolarHV™ series N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 5 A at 25°C (Tc). With a maximum power dissipation of 100 W (Tc) and an Rds On of 1.7 Ohm at 2.5 A and 10 V, it is suitable for demanding power switching. The device utilizes a through-hole mounting type in a standard TO-220-3 package. Key parameters include a gate charge of 14.2 nC at 10 V and input capacitance of 750 pF at 25 V. The IXTP5N60P is engineered for use in industries requiring robust high-voltage power conversion and switching solutions.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 50µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V |
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