IXTP5N50P
MOSFET N-CH 500V 4.8A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP5N50P is a N-Channel Power MOSFET from the PolarHV™ series, packaged in a TO-220-3 through-hole configuration. This device offers a Drain-to-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 4.8 A at 25°C, with a maximum power dissipation of 89 W at the same temperature. Key parameters include a low on-resistance (Rds On) of 1.4 Ohms maximum at 2.4 A and 10 V, and a gate charge (Qg) of 12.6 nC maximum at 10 V. Input capacitance (Ciss) is 620 pF maximum at 25 V. The MOSFET operates across a temperature range of -55°C to 150°C. This component is suitable for applications in industrial power supplies, renewable energy systems, and electric vehicle charging.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 50µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
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