IXTP50N085T
MOSFET N-CH 85V 50A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTP50N085T is an N-Channel Power MOSFET from the TrenchMV™ series, packaged in a TO-220-3 configuration. This component offers a Drain to Source Voltage (Vdss) of 85V and a continuous drain current (Id) of 50A at 25°C. Featuring a low on-resistance of 23mOhm at 25A and 10V, it achieves this with a gate drive of 10V. The device has a maximum power dissipation of 130W (Tc) and a gate charge (Qg) of 34 nC at 10V. Input capacitance (Ciss) is rated at 1460 pF at 25V. This through-hole mounted component operates across a temperature range of -55°C to 175°C (TJ). Its robust design makes it suitable for applications in power supply, motor control, and industrial power systems.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 25µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 25 V |
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