IXTP4N60P
MOSFET N-CH 600V 4A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTP4N60P is a high-voltage N-Channel Power MOSFET from the PolarHV™ series. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 4A at 25°C (Tc). With a maximum power dissipation of 89W (Tc) and an Rds(on) of 2 Ohms at 2A and 10V, it is suitable for demanding applications. The device has a gate charge (Qg) of 13 nC (Max) at 10V and an input capacitance (Ciss) of 635 pF (Max) at 25V. The IXTP4N60P utilizes a TO-220-3 through-hole package, operating within a temperature range of -55°C to 150°C. This component finds application in power supply units, industrial motor control, and lighting solutions.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 100µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 635 pF @ 25 V |
Request a Quote
Clients Also Buy
IXGH28N60B3D1
IGBT 600V 66A 190W TO247AD
IXTY1R6N50P
MOSFET N-CH 500V 1.6A TO252
IXTY2R4N50P
MOSFET N-CH 500V 2.4A TO252
