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IXTP450P2

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IXTP450P2

MOSFET N-CH 500V 16A TO220AB

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

IXYS IXTP450P2 is a high-performance N-Channel Power MOSFET from the PolarP2™ series. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 16A at 25°C (Tc). The IXTP450P2 offers a low on-resistance (Rds On) of 330mOhm maximum at 8A and 10V gate drive. With a maximum power dissipation of 300W (Tc), this device is suitable for demanding applications. Key parameters include a gate charge (Qg) of 43 nC maximum at 10V and input capacitance (Ciss) of 2530 pF maximum at 25V. The device is housed in a standard TO-220-3 through-hole package, facilitating ease of integration into various circuit designs. This MOSFET is utilized in power supply, motor control, and industrial power applications. Operating temperature ranges from -55°C to 150°C (TJ).

Additional Information

Series: PolarP2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Rds On (Max) @ Id, Vgs330mOhm @ 8A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2530 pF @ 25 V

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