IXTP3N60P
MOSFET N-CH 600V 3A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS PolarHV™ N-Channel Power MOSFET IXTP3N60P. This 600V device features a continuous drain current of 3A (Tc) and a maximum power dissipation of 70W (Tc). The TO-220-3 package offers through-hole mounting. Key parameters include a 2.9 Ohm maximum Rds On at 500mA and 10V, 9.8 nC gate charge at 10V, and 411 pF input capacitance at 25V. With a ±30V maximum gate-source voltage and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for applications in power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 50µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 411 pF @ 25 V |
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