IXTP3N50P
MOSFET N-CH 500V 3.6A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP350P is a PolarHV™ Series N-Channel MOSFET designed for demanding high-voltage applications. This device features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3.6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 2 Ohms at 1.8A and 10V Vgs, it offers efficient power switching. The IXTP350P is housed in a TO-220-3 through-hole package, supporting a maximum power dissipation of 70W (Tc). Key parameters include a gate charge (Qg) of 9.3 nC at 10V and input capacitance (Ciss) of 409 pF at 25V. This component is suitable for use in power supply units, industrial motor control, and lighting applications. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 50µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 409 pF @ 25 V |
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