IXTP3N110
MOSFET N-CH 1100V 3A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTP3N110 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1100 V and a continuous drain current (Id) of 3 A at 25°C (Tc). The device offers a maximum Rds On of 4 Ohms at 1.5 A and 10 V gate-source voltage, with a specified gate charge (Qg) of 42 nC at 10 V. The input capacitance (Ciss) is rated at a maximum of 1350 pF at 25 V. With a maximum power dissipation of 150 W (Tc), this MOSFET is housed in a TO-220-3 package suitable for through-hole mounting. The operating temperature range is -55°C to 150°C (TJ). This device is commonly utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1100 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 25 V |
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