IXTP340N04T4
MOSFET N-CH 40V 340A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP340N04T4 is an N-Channel Power MOSFET featuring 40V drain-source voltage and a continuous drain current of 340A at 25°C. This Trench technology device offers a low on-resistance of 1.9mOhm maximum at 100A and 10V gate drive. With a maximum power dissipation of 480W, it is suitable for high-power switching applications. Key parameters include a gate charge of 256nC and input capacitance of 13000pF at 25V. The component is housed in a TO-220-3 package for through-hole mounting and operates across a temperature range of -55°C to 175°C. Applications include power supplies, motor control, and high-current switching circuits in industrial and automotive sectors.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 340A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 256 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 25 V |
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