IXTP32N65XM
MOSFET N-CH 650V 14A TO220-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTP32N65XM is a N-Channel MOSFET from the Ultra X series, designed for high voltage applications. This component features a Vdss rating of 650V and a continuous drain current capability of 14A at 25°C (Tc), with a maximum power dissipation of 78W (Tc). The Rds On is specified at 135mOhm maximum at 16A and 10V gate drive. Key parameters include a gate charge (Qg) of 54 nC (Max) at 10V and input capacitance (Ciss) of 2206 pF (Max) at 25V. The device is housed in a TO-220-3 package, suitable for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply, industrial motor control, and lighting applications.
Additional Information
Series: Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2206 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTH20N65X
MOSFET N-CH 650V 20A TO247
IXTP32N65X
MOSFET N-CH 650V 32A TO220-3
IXTA20N65X-TRL
MOSFET N-CH 650V 20A TO263
