IXTP32N65X
MOSFET N-CH 650V 32A TO220-3Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP32N65X is an N-Channel MOSFET from the Ultra X series. This through-hole component features a 650V drain-source voltage (Vdss) and a continuous drain current (Id) of 32A at 25°C. With a maximum power dissipation of 500W (Tc), it offers a low on-resistance (Rds On) of 135mOhms at 16A and 10V gate drive. The device has a gate charge (Qg) of 54 nC at 10V and an input capacitance (Ciss) of 2205 pF at 25V. Its TO-220-3 package is suitable for applications in power supply, industrial motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2205 pF @ 25 V |
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