IXTP2R4N50P
MOSFET N-CH 500V 2.4A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP2R4N50P is a high-voltage N-Channel Power MOSFET from the PolarHV™ series. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 2.4A at 25°C. With a maximum Power Dissipation (Pd) of 55W at 25°C (Tc), it offers a low on-resistance of 3.75 Ohms maximum at 500mA and 10V gate drive. The device exhibits a Gate Charge (Qg) of 6.1 nC maximum at 10V and an Input Capacitance (Ciss) of 240 pF maximum at 25V. The IXTP2R4N50P is housed in a standard TO-220-3 package, facilitating through-hole mounting. It is designed for operation across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power conversion, renewable energy systems, and industrial power supplies.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.75Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 25µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
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