IXTP2N80P
MOSFET N-CH 800V 2A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP2N80P is an N-Channel Power MOSFET from the PolarHV™ series. This component features a Drain-Source Voltage (Vdss) of 800 V and a continuous Drain Current (Id) of 2 A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 6 Ohms at 1 A and 10 V, and a power dissipation capability of 70 W (Tc), it is suitable for high-voltage applications. Key parameters include a Gate Charge (Qg) of 10.6 nC at 10 V and an Input Capacitance (Ciss) of 440 pF at 25 V. The MOSFET utilizes a Metal Oxide technology and is housed in a TO-220-3 through-hole package. Operating temperature ranges from -55°C to 150°C (TJ). This component finds application in industries requiring high voltage switching and power management.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 50µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
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