IXTP2N80
MOSFET N-CH 800V 2A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTP2N80 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 800V and a continuous Drain Current (Id) of 2A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 6.2 Ohms at 500mA and 10V gate drive. Key parameters include Input Capacitance (Ciss) of 440pF (Max) at 25V and Gate Charge (Qg) of 22nC (Max) at 10V. With a maximum power dissipation of 54W (Tc), it is housed in a TO-220-3 through-hole package. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, lighting, and motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 54W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFK90N20Q
MOSFET N-CH 200V 90A TO264AA
IXFH20N60
MOSFET N-CH 600V 20A TO-247AD
IXTH20N50D
MOSFET N-CH 500V 20A TO247
