IXTP2N60P
MOSFET N-CH 600V 2A TO220ABManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTP2N60P is an N-Channel Power MOSFET from the Polar™ series, designed for high voltage applications. Featuring a Drain-Source Voltage (Vdss) of 600V, this component offers a continuous drain current (Id) of 2A at 25°C and a maximum power dissipation of 55W (Tc). The on-resistance (Rds On) is specified at 5.1 Ohm maximum at 1A and 10V gate drive. Key parameters include a gate charge (Qg) of 7 nC maximum at 10V and input capacitance (Ciss) of 240 pF maximum at 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a standard TO-220-3 package for through-hole mounting. Its robust construction and performance characteristics make it suitable for use in power supply, industrial motor control, and lighting control applications.
Additional Information
Series: Polar™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
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